7th IMRMPT

Abstract

Abstract information

English title:	Simulation of the absorber layer thickness variation in SnS solar cells using Matlab
Spanish title:	Simulaci�n de la variaci�n del espesor de la capa absorbente en celdas solares de SnS empleando Matlab
English abstract:	The study of thin-film solar cells based on SnS is becoming increasingly relevant due to its advantages over similar technologies, such as its low cost, toxicity, and the fact that its constituent elements are more abundant in the earth's crust. On the other hand, Simulations allow modelling of the behaviour of solar cells to understand the processes and improve the device's efficiency. Therefore, in this work, the simulation of a heterojunction with SnS/ZnS/ZnO configuration is carried out using mathematical models that represent the physical behaviour of the solar cell. Two radiation models were evaluated, one using a theoretical equation and the other with data from the incident radiation in Bucaramanga. The simulation was performed using MATLAB. The optimal thickness of the absorbent layer was established from the results obtained for open circuit potential (Voc), short circuit current (Jcs) and fill factor.
Spanish abstract:	El estudio de celdas solares de pel�culas delgadas basadas en SnS cada vez toma mayor relevancia debido a las ventajas que presenta respecto a otras tecnolog�as similares, tales como su bajo costo, su toxicidad y que sus elementos constitutivos presentan mayor abundancia en la corteza terrestre. Las simulaciones permiten modelar el comportamiento de las celdas solares con el fin de entender los procesos y mejorar la eficiencia del dispositivo. A ra�z de esto, en este trabajo se realiza la simulaci�n de una heterojuntura con configuraci�n SnS/ZnS/ZnO mediante modelos matem�ticos que representan el comportamiento f�sico de la celda solar. La simulaci�n se realiz� empleando MATLAB. Se evaluaron dos modelos de radiaci�n, uno empleando una ecuaci�n te�rica y el otro con datos de la radiaci�n incidente en Bucaramanga. Se determin� la tensi�n de circuito abierto (Voc), la densidad de corriente de corto circuito (Jcs,), el factor de llenado (FF) y la eficiencia de la celda, con el fin de obtener el espesor m�s adecuado de la capa absorbente de SnS.
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Authors

Name	Institution	Email
Clara Lizeth Rojas Rinc�n	Universidad Industrial de Santander	clararojasrincon@gmail.com
Alexander Sep�lveda	Universidad Industrial de Santander	fasepul@uis.edu.co
M�nica Andrea Botero Londo�o	Universidad Industrial de Santander	mabotero@uis.edu.co
Mar�a Alejandra Mantilla Villalobos	Universidad Industrial de Santander	marialem@uis.edu.co
Carlos Eduardo Rond�n Almeyda	Universidad Industrial de Santander	carlos.rondon.al@gmail.com

Presentation

Room:	Principal Room
Date:	June 7, 2023
Hour:	17:40 - 18:00

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7^th IMRMPT
Seventh International Meeting for Researchers in Materials and Plasma Technology

Previous editions:

        1st IMRMPT 2011
        2nd IMRMPT 2013
        3rd IMRMPT 2015
        4th IMRMPT 2017
        5th IMRMPT 2019
        5+1 IMRMPT 2021

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