7th IMRMPT

Abstract

Abstract information

English title:	Electric-field Dipole Engineering at the Nanoscale
Spanish title:	Ingenier�a de dipolos de campo el�ctrico a nanoescala
English abstract:	Efficient energy conversion and high energy density storage materials that support high power rates and trillions of cycles, made of environmentally friendly materials, are needed to overcome environmental sustainability issues. The construct of electric-field dipole engineering at the nanoscale (E-DENS) affords special opportunity for material science and engineering not contemplated within semiconductor physics. E-DENS provides the opportunity for scientific investigation of local through macroscale electric-fields and an engineering opportunity to systematically control essential intrinsic material properties: resistivity, breakdown field strength, relative permittivity and loss tangent that control the efficiency of energy conversion, length of time and amount of energy density that can be stored. Semiconductor physics can be modified to understand the results of E-DENS, local reverse biased p-n junction effects at the nanoscale that increase resistivity and breakdown field strength, which control the length of time dielectric energy can be stored and the maximum energy that can be stored for a given relative permittivity material. The relative permittivity can be designed using the Mossotti � Lorenz � Lorentz � Clausius relation. The resistivity and electric-field breakdown strength of the material can be designed using appropriate dipole pairs. Data are presented that demonstrate the unique potential of E-DENS as both a scientific and engineering tool. Currently, at low concentration of substituents (<2 at%), resistivity has been shown to increase resistivity by up to ten-million times, breakdown field strength by more than an order of magnitude, and diffuseness of relative permittivity controlled from ferroelectric to diffuse phase transition to relaxor-like properties; yet, the materials are not strict relaxors.
Spanish abstract:	Se necesitan materiales de conversi�n de energ�a eficiente y almacenamiento de alta densidad de energ�a que admitan altas tasas de potencia y billones de ciclos, hechos de materiales ecol�gicos, para superar los problemas de sostenibilidad ambiental. La construcci�n de ingenier�a de dipolo de campo el�ctrico a nanoescala (E-DENS) brinda una oportunidad especial para la ciencia e ingenier�a de materiales que no se contemplan dentro de la f�sica de semiconductores. E-DENS brinda la oportunidad de realizar investigaciones cient�ficas de campos el�ctricos locales a macroescala y una oportunidad de ingenier�a para controlar sistem�ticamente las propiedades intr�nsecas esenciales de los materiales: resistividad, fuerza de campo de ruptura, permitividad relativa y tangente de p�rdida que controlan la eficiencia de la conversi�n de energ�a, la duraci�n del tiempo. y la cantidad de densidad de energ�a que se puede almacenar. La f�sica de los semiconductores se puede modificar para comprender los resultados de E-DENS, efectos locales de uni�n p-n con polarizaci�n inversa a nanoescala que aumentan la resistividad y la intensidad del campo de ruptura, que controlan el tiempo que se puede almacenar la energ�a diel�ctrica y la energ�a m�xima que se puede almacenar para un material de permitividad relativa dado. La permitividad relativa se puede dise�ar utilizando la relaci�n Mossotti � Lorenz � Lorentz � Clausius. La resistividad y la resistencia a la ruptura del campo el�ctrico del material se pueden dise�ar utilizando pares de dipolos apropiados. Se presentan datos que demuestran el potencial �nico de E-DENS como herramienta tanto cient�fica como de ingenier�a. Actualmente, a una baja concentraci�n de sustituyentes (<2 at%), se ha demostrado que la resistividad aumenta la resistividad hasta diez millones veces, la intensidad del campo de ruptura en m�s de un orden de magnitud y la difusividad de la permitividad relativa controlada de transici�n de fase ferroel�ctrica a difusa a propiedades relajantes; sin embargo, los materiales no son relajantes estrictos.
Topic:
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Speaker:

Authors

Name	Institution	Email
Steven Tidrow	Alfred University	tidrow@alfred.edu

Presentation

Room:	Principal Room
Date:	June 7, 2023
Hour:	12:00 - 12:30

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7^th IMRMPT
Seventh International Meeting for Researchers in Materials and Plasma Technology

Previous editions:

        1st IMRMPT 2011
        2nd IMRMPT 2013
        3rd IMRMPT 2015
        4th IMRMPT 2017
        5th IMRMPT 2019
        5+1 IMRMPT 2021

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