7th IMRMPT

Abstract

Abstract information

English title:	Effect of organic thin films morphology and light-emitting layer thickness on the opto-electric properties in an OLED
Spanish title:	Efecto de la morfolog�a de pel�culas delgadas org�nicas y del espesor de la capa emisora de luz sobre las propiedades opto el�ctricas en un OLED
English abstract:	Organic Light Emitting Diodes (OLEDs) are becoming the emerging technology for high-quality displays and solid-state lighting, due to various properties of organic materials that make them more appropriate in the manufacture of optoelectronic devices, such as their flexibility, color quality, and high efficiency and therefore energy saving. Using the high vacuum thermal evaporation technique, thin films of the organic semiconductor compounds NPB (used as hole transporter), CBP:Ir(ppy)2(acac) (used as phosphorescent emitter) and TPBi (used as electron transporter), were fabricated and morphologically characterized in order to determine the best preparation conditions for using these layers in the implementation of an organic light-emitting device. For this study, the deposition temperature of the different layers was varied, keeping the deposition rate constant in accordance with previous studies. The surface morphology of these samples was analyzed by atomic force microscopy (AFM), to obtain roughness values to determine the best deposit conditions. This study allowed us to define that the layers deposited at 22�C present lower roughness values, compared to those deposited at higher temperatures. Subsequently, under this parameter, green light emitting devices were fabricated with the ITO/NPB/CPB:Ir(ppy)2(acac)/TPBi/Al architecture, varying the thickness of the emitting layer at 15nm, 20nm, and 25nm. The electrical properties of the device were determined by means of the current/voltage curve and the optical ones by means of the electroluminescence spectrum. The results indicate that the device with an emitting layer thickness of 15nm is the one that presents the best-emitting properties.
Spanish abstract:	Los diodos org�nicos emisores de luz (OLED) se est�n convirtiendo en la tecnolog�a emergente para pantallas de alta calidad y en la iluminaci�n de estado s�lido, debido a varias propiedades de los materiales org�nicos que los hace m�s apropiados en la fabricaci�n de dispositivos optoelectr�nicos, como lo son una estructura flexible, calidad de color, alta eficiencia y, por tanto, ahorro de energ�a. Mediante la t�cnica de evaporaci�n t�rmica en alto vac�o, se fabricaron y caracterizaron morfol�gicamente pel�culas delgadas de los compuestos org�nicos semiconductores NPB (usado como transportador de huecos), CBP:Ir(ppy)2(acac) (usado como emisor fosforescente) y TPBi (usado como transportador de electrones), para determinar las mejores condiciones de preparaci�n con el fin de usarlas en la implementaci�n de un dispositivo emisor de luz org�nico. Para este estudio se vari� la temperatura de dep�sito de las diferentes capas, manteniendo constante la tasa de dep�sito de acuerdo con estudios previos. La morfolog�a superficial de estas muestras se analiz� por microscop�a de fuerza at�mica (AFM), con el fin de obtener valores de rugosidad para determinar las mejores condiciones de dep�sito. Este estudio permiti� definir que las capas depositadas a 22�C presentan menores valores de rugosidad, comparadas con las depositadas a mayores temperaturas. Posteriormente, bajo este par�metro, se fabricaron dispositivos emisores de luz verde con la arquitectura ITO/NPB/CPB:Ir(ppy)2(acac)/TPBi/Al, variando el espesor de la capa emisora en 15nm, 20nm y 25nm. Las propiedades el�ctricas del dispositivo se determinaron mediante la curva corriente/voltaje y las �pticas mediante el espectro de electroluminiscencia. Los resultados indican que el dispositivo con espesor de capa emisora de 15nm es el que presenta las mejores propiedades emisoras.
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Authors

Name	Institution	Email
german anibal mendez merchan	Universidad Cat�lica de Colombia	gamendez@ucatolica.edu.co
Angel Miguel Ardila Vargas	Universidad Nacional de Colombia	amardilav@unal.edu.co
Valeria Burgos Castro	Universidad Nacional de Colombia	vburgosc@unal.edu.co

Presentation

Room:	Principal Room
Date:	June 8, 2023
Hour:	08:40 - 09:00

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7^th IMRMPT
Seventh International Meeting for Researchers in Materials and Plasma Technology

Previous editions:

        1st IMRMPT 2011
        2nd IMRMPT 2013
        3rd IMRMPT 2015
        4th IMRMPT 2017
        5th IMRMPT 2019
        5+1 IMRMPT 2021

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